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OM11N60SA OM11N55SA
POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE
600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal Package
FEATURES
* * * * * Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. The device breakdown ratings provide a substantial voltage margin for stringent applications such as 270 VDC aircraft power and/or rectified 230 VAC power (line operation). They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER OM11N60 OM11N55 VDS 600V 550V RDS(on) .50 .44 ID(MAX) 11A 11A
3.1
SCHEMATIC
DRAIN
GATE
SOURCE
4 11 R1 Supersedes 2 04 R0
3.1 - 19
3.1
OM11N60SA - OM11N55SA
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ELECTRICAL CHARACTERISTICS:
STATIC P/N OM11N60SA
Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 .47 11.0 0.1 0.2 2.0 600
TC = 25 unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM11N55SA
Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 11.0 0.1 0.2 2.0 550
TC = 25 unless otherwise noted
Min. Typ. Max. Units Test Conditions V 4.0 100 0.25 1.0 V nA mA mA A 3.1 .50 1.0 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS > ID(on) x RDS(on), VGS = 10 V VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A, TC = 125 C
Min. Typ. Max. Units Test Conditions V 4.0 100 0.25 1.0 V nA mA mA A 3.3 .37 .44 .88 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS > ID(on) x RDS(on), VGS = 10 V VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A, TC = 125 C
VDS(on) Static Drain-Source On-State
VDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1
DYNAMIC
gfs Ciss Coss Crss Td(on) tr Td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 5.0 3000 440 220 55 75 225 135 S(W ) VDS 2 VDS(on), ID = 5.5 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 210 V, ID @ 7.0 A Rg = 5 W , RL = 30 W
(MOSFET) switching times are essentially independent of operating temperature.
DYNAMIC
gfs Ciss Coss Crss Td(on) tr Td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 5.0 3000 440 220 55 75 225 135 S(W ) VDS 2 VDS(on), ID = 5.5 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 210 V, ID @ 7.0 A Rg = 5 W , RL = 30 W
(MOSFET) switching times are essentially independent of operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700 - 1.4 V ns - 52 A - 11 A
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700
- 11 - 52 - 1.4
TC = 25 C, IS = -11 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms
VSD trr
ns
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(W ) A A V
(W )
3.1 - 20
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G
D
S
TC = 25 C, IS = -11 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms
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OM11N60SA - OM11N55SA
ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Symbol VDGR VDS ID ID IDM PD PD Parameter Drain Source Voltage Drain Gate Voltage (RGS = 1.0 M ) Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current
1
OM11N60 600 600 11 7.2 52 125 50 1.0 .020
OM11N55 550 550 11 7.2 52 125 50 1.0 .020
Units V V A A A W W W/C W/C C C
Max. Power Dissipation @ TC = 25C Max. Power Dissipation @ TC = 100C Linear Derating Factor Jct. to Case Linear Derating Factor Jct. to Ambient
TJ, Tstg
Operating and Storage Temp. Range Lead Temperature (1/16" from case for 10 sec.)
-55 to 150 300 300
1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%.
THERMAL RESISTANCE (Maximum at TA = 25C)
RthJC RthJA Junction-to-Case Junction-to-Ambient (Free Air Operation) 1.0 50 1.0 50 C/W C/W
3.1
3.1 - 21
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OM11N60SA - OM11N55SA
MECHANICAL OUTLINES
.144 DIA.
.545 .535
.050 .040
.685 .665
.800 .790
.550 .530
.550 .510 .045 .035 .150 TYP. .260 .249
.005
.150 TYP.
TO-254 AA Package
.940 .740 .540 .200 .100 2 PLCS. .040 .260 MAX
3.1
.290 .125 2 PLCS.
.250
.125 DIA. 2 PLS.
.540
.500 MIN.
.150 .300
.040 DIA. 3 PLCS. .150
Omnirel AZ Package
For Z-Pack configuration, add letter "Z" to part number, Example - OMXXXXSAZ Standard Products are supplied with glass feedthroughs, for ceramic feedthroughs, add letter "C" to part number, Example - OMXXXXCSA
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

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